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НМ 1 + NMI 1

Детаљи сесије / Session details

НМ 1 + NMI 1

09.06.2026. 09:00–11:00
Сала / Room: Сала 1 / Hall 1Секција / Трацк / Section / Track: NM
Председавајући / ChairNebojša Mitrović, Vesna Paunović,
Институција / InstitutionUniversity of Kragujevac, Faculty of Technical Sciences, Čačak, Serbia | University of Niš, Faculty of Electronic Engineering, Niš, Serbia
  1. NMI1.1
    Thickness–Morphology Correlations and Effective Medium Description in P3HT:PCBM Organic Solar Cells
    Jovana Gojanović
    ID: 3770Секција / Track: NMILIEEE Xplore
    Кључне речи / Keywords: organic semiconductors, organic solar cells, thin film thickness, morphology, effective medium
    Апстракт / Abstract
    As classical silicon electronics approach the physical
    limits of Moore’s Law and the global energy transition
    demands rapid advancements in solar photovoltaics, organic
    semiconductors have emerged as a distinct material class to
    address both challenges.
    Organic solar cells (OSCs) offer unique advantages over
    silicon photovoltaics, including mechanical flexibility,
    solution-based processing, and tunable optical properties.
    This study focuses on the intrinsic characteristics of
    organic materials that directly influence solar cell
    performance, specifically addressing recent trends in
    thickness-insensitive devices and donor/acceptor (D/A)
    interface orientation. In light of these advancements, the
    authors previous findings are reviewed and their
    implications are highlighted. Prior investigations
    analyzing P3HT:PCBM based OSCs with different active layer
    thicknesses (ALTs) operating in both photodetector and
    solar cell modes was reconsidered. A comprehensive
    drift–diffusion model was utilized to reproduce
    experimental photocurrent spectra and current
    density-voltage characteristics. The research demonstrated
    a non-monotonic variation of optical and electrical
    parameters with ALT, revealing strong and tight correlation
    between film thickness and morphology. Furthermore,
    comparable performance between bilayer and bulk
    heterojunction (BHJ) devices challenges the common
    assumption that BHJ materials function as a single
    effective medium. Instead, the findings indicate that
    spatial arrangement and domain orientation strongly
    influence charge carrier photogeneration and recombination,
    proving that BHJ materials must be treated as ensembles of
    D/A interfaces rather than homogeneous layers.
  2. NMI1.2
    Testing the adhesive properties of epoxy resin for bonding aluminum alloy parts and the possibility of extension of their service life
    Nikola Nedeljković, Ivana Mladenović, Marija Vuksanović, Vera Obradović, Dana Vasiljević-Radović, Stefan Dikić and Radmila Jančić-Hainemann
    ID: 4833Секција / Track: NMRPProceedings
    Кључне речи / Keywords: epoxy resin, aluminium alloy, adhesion, anodization, mechanical properties, service life
    Апстракт / Abstract
    This study examined the adhesion between anodized aluminum
    alloy 7075 and epoxy adhesive, focusing on extending the
    adhesive's service life. Characterization methods included
    Vickers microhardness (HV), Atomic Force Microscopy (AFM),
    Owens-Wendt-Rabel-Kaelble (OWRK) analysis, and shear
    testing. Results showed that non-anodized samples with
    epoxy had the highest HV values. AFM confirmed that
    anodization increases surface roughness, while the epoxy
    formed a uniform, defect-free film. OWRK analysis indicated
    that epoxy-coated samples had the highest surface energy,
    dominated by the polar component, confirming hydrophilicity
    and favorable adhesion. Shear testing revealed that
    anodized and primed samples bonded with epoxy beyond its
    nominal service life achieved the highest shear stress,
    demonstrating the potential to extend adhesive usability.
    The adhesion parameter b was also the highest for anodized
    and primed samples, confirming superior bonding
    performance. Overall, anodization combined with priming
    enhanced adhesion and supported the sustainable extension
    of epoxy adhesive service life.
  3. NMI1.3
    Boron-induced Microstructural and Trap Optimization for Improved NIR Persistent Luminescence in CaSnO₃:Cr³⁺ Phosphors
    Sofiia Maleeva and Maxim Ivanov
    ID: 7941Секција / Track: NMRPIEEE Xplore
    Кључне речи / Keywords: CaSnO3 perovskite, Cr3+ -doped phosphors, Near-infrared luminescence, Persistent luminescence
    Апстракт / Abstract
    Boron co-doping is employed to optimize microstructure
    and trap distribution in CaSnO₃:Cr³⁺,Gd³⁺,Na⁺ phosphors for
    enhanced
    near-infrared (NIR) persistent luminescence. The addition
    of boron
    induces liquid-phase sintering, leading to grain growth
    (~32 μm) and
    a ~40% increase in photoluminescence intensity. The
    optimized
    composition with 4 at.% B shows improved emission and energy
    storage characteristics of the material. Decay analysis (n
    ≈ 0.97)
    reveals a tunneling-controlled recombination mechanism,
    while trap
    engineering extends the afterglow beyond 2 h. The results
    demonstrate
    that combining boron-assisted microstructural control with
    Gd³⁺/Na⁺-
    mediated crystal-field and defect engineering is an
    effective route to
    high-performance NIR persistent phosphors.
  4. NMI1.4
    Structural, Morphological and Optical Properties of Poly(methyl methacrylate)-Yttrium Aluminum Garnet
    Ivana Stajcic
    ID: 6470Секција / Track: NMRPIEEE Xplore
    Кључне речи / Keywords: composite, PMMA, structural, optical
    Апстракт / Abstract
    The design of polymer-ceramic composites with tunable
    optical response remains a challenge in advancing efficient
    and adaptable optoelectronic materials. In this work, we
    report an investigation of poly(methyl methacrylate) (PMMA)
    composites reinforced with yttrium aluminum garnet (YAG)
    particles, focusing on the coupling between garnet-based
    emitters and transparent polymer matrix at low filler
    loadings. High-purity YAG with controlled submicron
    particle size distribution was incorporated into PMMA via
    solution processing, enabling uniform dispersion and
    preservation of structural integrity. Comprehensive
    characterization using electron microscopy, diffraction
    analysis and infrared spectroscopy confirms phase purity,
    high crystallinity and subtle interfacial interactions that
    do not disrupt the polymer backbone but induce measurable
    vibrational shifts. Most importantly, time-resolved
    fluorescence analysis reveals an enhancement of emission
    intensity accompanied by a red shift and spectral
    broadening in PMMA-YAG composites compared to pristine
    PMMA. This behavior indicates synergistic light-matter
    interactions arising from the hybrid structure. The results
    demonstrate that even minimal YAG incorporation can
    effectively modulate optical emission pathways, offering a
    controllable strategy for tailoring photonic responses.
    These findings provide new insight into the
    structure-property relationships in polymer-garnet systems
    and establish PMMA-YAG composites as promising candidates
    for next-generation light-emitting and photonic devices,
    where tunability, processability and optical efficiency are
    simultaneously required.
  5. NMI1.5
    Resonance-Enhanced Sensitivity in an Amorphous Soft Magnetic Alloy Sample – Test Fixture Microwave System
    Vedran Ibrahimović and Nebojsa Mitrovic
    ID: 1105Секција / Track: NMRPProceedings
    Кључне речи / Keywords: magneto-impedance, amorphous alloy, ferromagnetic resonance, vector network analyzer, de-embedding, apparent negative resistance, sensitivity
    Апстракт / Abstract
    This paper studies the field-dependent microwave response
    of an amorphous soft ferromagnetic alloy sample (ribbon or
    microwire) measured in a vector network analyzer (VNA) and
    test-fixture (TF) system. The results indicate that the
    apparent negative real part of impedance should not be
    interpreted as a true intrinsic negative resistance of the
    sample, but rather as a resonance-related effect associated
    with ferromagnetic resonance and the reference-based VNA/TF
    measurement procedure. To further clarify this phenomenon,
    attenuation curves reported in the literature were
    digitized, reconstructed, and used to synthesize the
    corresponding microwave S-parameter response. The influence
    of embedding and de-embedding conditions on the field
    sensitivity was analyzed. TF can modify the resonance
    region and significantly change magnetic-field sensitivity.
    In the analyzed case, the best result was obtained for a
    configuration with one cascaded TF section and grounded
    opposite side of the coaxial sample, yielding a sensitivity
    improvement of about 670% compared with the standalone
    synthesized response.
  6. NM1.1
    Uticaj holmijuma na mikrostrukturu i specifičnu električnu otpornost barijum titanatne keramike
    Miloš Đorđević, Vesna Paunovic, Aneta Prijić and Zoran Prijić
    ID: 1586Секција / Track: NMRPZbornik
    Кључне речи / Keywords: mikrostruktura, BaTiO3 keramika, specifična električna otpornost
    Апстракт / Abstract
    U ovom radu vršeno je ispitivanje specifične električne
    otpornosti (ρ) i temperaturnog koeficijenta specifične
    električne otpornosti (α) BaTiO3 keramike dopirane
    holmijumom. Koncentracija jona Ho3+ kretala se od 0.01 at%
    do 1.0 at%. Uzorci su pripremljeni konvencionalnom metodom
    sinterovanja u čvrstom stanju i sinterovani na temperaturi
    od 1320 °C. Analiza mikrostrukture pokazala je da
    koncentracija dopanta direktno utiče na veličinu zrna. Kod
    uzoraka sa 0.01 at% Ho, veličina zrna kretala se u opsegu
    od 10 µm do 30 µm, dok je daljim povećanjem koncentracije
    (0.1 at% Ho) ona opala na 5–20 μm. Najmanja veličina zrna
    zabeležena je kod uzoraka sa 0.5 at% Ho (2–3 μm) i 1.0 at%
    Ho (0.2–2 μm). Za sve uzorke specifična električna
    otpornostnost merena je u temperaturnom intervalu od 30 °C
    do 170 °C i u frekventnom opsegu od 100 Hz do 1 MHz. Porast
    temperature doveo je do povećanja otpornosti. Od sobne
    temperature do 100 °C taj porast je blaži, nakon čega sledi
    nagli skok vrednosti. Nasuprot tome, povećanje frekvencije
    dovodi do pada specifične otpornosti, sa posebno izraženim
    padom iznad 200 kHz. Pored specifične električne
    otpornosti, ispitivan je i temperaturni koeficijent
    specifične električne otpornosti (α). Kod svih ispitanih
    uzoraka potvrđen je PTC efekat (pozitivni temperaturni
    koeficijent otpornosti) u temperaturnom opsegu od 30 °C do
    128 °C.